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| ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: AUTOPROTECTED DARLINGTON 10 AMPERES 360 -450 VOLTS CLAMP 150 WATTS * Integrated High-Voltage Active Clamp * Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the -40C to +125C Temperature Range * Clamping Energy Capability 100% Tested in a Live * * * w Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times Offered in Plastic SOT-93/TO-218 Type or TO-220 Packages 360 V CLAMP CASE 340D-02 SOT-93/TO-218 TYPE This device is available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative. IIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I I I I I I I I IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I I I I I I I I IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I I I I I I I I IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VEBO IC ICM IB IBM PD Value 350 6.0 10 20 Unit Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage Collector-Emitter Voltage Collector Current -- Continuous -- Peak Base Current -- Continuous -- Peak Total Power Dissipation Derate above 25_C 3.0 6.0 (TC = 25_C) 150 1.0 Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 175 THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max 1.0 Unit Thermal Resistance, Junction to Case _C/W _C Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds 260 (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 12 1 Publication Order Number: BU323Z/D IIIIIIIIIIIIIII IIII IIIIIII I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIII I I II I II I I IIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) CLAMPING ENERGY (see notes) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Cross-over Time Storage Time Fall Time Repetitive Non-Destructive Energy Dissipated at turn-off: (IC = 7.0 A, L = 8.0 mH, RBE = 100 ) (see Figures 2 and 4) Input Capacitance (VEB = 6.0 V) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) DC Current Gain (IC = 6.5 Adc, VCE = 1.5 Vdc) (IC = 5.0 Adc, VCE = 4.6 Vdc) Diode Forward Voltage Drop (IF = 10 Adc) Base-Emitter On Voltage (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 7.0 Adc, IB = 70 mAdc) Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 100 mAdc) (IC = 10 Adc, IB = 0.25 Adc) Emitter-Base Leakage Current (VEB = 6.0 Vdc, IC = 0) Collector-Emitter Cutoff Current (VCE = 200 V, IB = 0) Collector-Emitter Clamping Voltage (IC = 7.0 A) (TC = - 40C to +125C) (IC = 10 Adc, IB = 0.25 Adc) (IC = 8.0 Adc, IB = 0.1 Adc) Characteristic (IC = 6.5 A, IB1 = 45 mA, VBE(off) = 0, RBE(off) = 0, VCC = 14 V, VZ = 300 V) (TC = - 40C to +125C) (TC = - 40C to +125C) http://onsemi.com (TC = 125C) (TC = 125C) BU323Z 2 WCLAMP Symbol VCLAMP VCE(sat) VBE(sat) VBE(on) ICEO IEBO Cob hFE Cib VF fT tsi tfi tc Min 200 150 500 350 1.1 1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 625 1.7 10 -- 3400 Max 550 200 100 450 2.0 2.5 2.1 2.3 1.6 1.8 1.8 2.1 1.7 2.2 2.5 50 -- 30 -- -- mAdc Adc MHz Unit Vdc Vdc Vdc Vdc Vdc mJ pF pF -- s s ns BU323Z IC INOM = 6.5 A MERCURY CONTACTS WETTED RELAY Output transistor turns on: IC = 40 mA L INDUCTANCE (8 mH) VCE MONITOR (VGATE) IC CURRENT SOURCE High Voltage Circuit turns on: IC = 20 mA Avalanche diode turns on: IC = 100 A VCE VCLAMP NOMINAL = 400 V RBE = 100 IB CURRENT SOURCE VBEoff IB2 SOURCE IC MONITOR 0.1 NON INDUCTIVE 250 V Icer Leakage Current 300 V 340 V Figure 1. IC = f(VCE) Curve Shape Figure 2. Basic Energy Test Circuit By design, the BU323Z has a built-in avalanche diode and a special high voltage driving circuit. During an auto-protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in "FBSOA." Because of the built-in zener and associated network, the IC = f(VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1. The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 , Vgate = 280 V, L = 8.0 mH 10 300 s IC, COLLECTOR CURRENT (AMPS) 1 TC = 25C 10 ms 250 ms 0.1 1 ms 0.01 THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 100 340 V VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0.001 10 Figure 3. Forward Bias Safe Operating Area http://onsemi.com 3 BU323Z IC ICPEAK IC HIGH IC LOW VCE The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a. (a) IC ICPEAK VGATE MIN IC HIGH IC LOW VCE (b) IC ICPEAK VGATE MIN IC HIGH The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. IC LOW VCE (c) IC ICPEAK VGATE MIN IC HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d. IC LOW VCE (d) VGATE MIN Figure 4. Energy Test Criteria for BU323Z http://onsemi.com 4 BU323Z 10000 10000 TYPICAL hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TJ = 125C 1000 -40C 100 25C 1000 TYP - 6 TYP + 6 100 VCE = 1.5 V 10 100 1000 IC, COLLECTOR CURRENT (MILLIAMPS) 10000 10 100 VCE = 5 V, TJ = 25C 1000 10000 IC, COLLECTOR CURRENT (MILLIAMPS) 100000 Figure 5. DC Current Gain Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 IB, BASE CURRENT (MILLIAMPS) 100 7A 5A 8A 10 A IC = 3 A TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 25C IC/IB = 150 TJ = 125C 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Collector Saturation Region Figure 8. Collector-Emitter Saturation Voltage VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 2.0 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC/IB = 150 1.8 1.6 1.4 1.2 1.0 0.8 0.1 125C TJ = 25C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1 125C TJ = 25C VCE = 2 VOLTS 1 IC, COLLECTOR CURRENT (AMPS) 10 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 9. Base-Emitter Saturation Voltage Figure 10. Base-Emitter "ON" Voltages http://onsemi.com 5 BU323Z PACKAGE DIMENSIONS CASE 340D-02 SOT-93/TO-218 TYPE ISSUE E C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H DIM A B C D E G H J K L Q S U V STYLE 1: PIN 1. 2. 3. 4. http://onsemi.com 6 BU323Z Notes ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 BU323Z/D |
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